标题:Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching
作者:王强[1,2];冀子武[1];肖洪地[1];吕海燕[1];李建飞[1];徐现刚[3];吕元杰[4];冯志红[4]
作者机构:[王强;冀子武;肖洪地;吕海燕;李建飞]SchoolofPhysics,ShandongUniversity,Jinan25010.;[王强]SchoolofScience,QiluUniversityofTechnology,Jinan250353.;[徐现刚 更多
通讯作者:Ji, ZW
通讯作者地址:[Ji, ZW]Shandong Univ, Sch Phys, Jinan 25010, Peoples R China.
来源:中国物理快报:英文版
出版年:2014
卷:31
期:8
页码:163-166
DOI:10.1088/0256-307X/31/8/088103
关键词:电化学腐蚀法;纳米多孔;光致发光;GAN薄膜;制备;金属有机化学气相沉积;扫描电子显微镜;外延生长;
摘要:Nanoporous (NP) GaN is prepared by electrochemical etching on a GaN epilayer grown on a sapphire substrate by metal-organic chemical vapor deposition. Scanning electron microscopy reveals that the average pore diameter and inter-pore spacing are approximately 25 and 45 nm, respectively. The photoluminescence (PL) spectra show that in contrast to the initial as-grown GaN epilayer, the NP GaN exhibits a high near-band-edge UV intensity, significant relaxation of compressive strain, and a lower yellow luminescence intensity. Both the line shape and line width of the PL spectra are almost the same for these two samples. The high quality of the NP GaN can be explained by the enhancement of the PL extraction efficiency and the decrease of impurity and defect density after etching.
收录类别:SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:2
资源类型:期刊论文
原文链接:http://lib.cqvip.com/qk/84212X/201408/661976455.html
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