通讯作者地址：[WU, XG]SHANDONG UNIV,DEPT OPT,JINAN 250100,PEOPLES R CHINA.
来源：CHINESE PHYSICS LETTERS
出版年：1991
卷：8
期：4
页码：184-186
关键词：实时边增强; Ce掺杂晶体; 象
摘要：Edge enhancement has been performed in Ce-doped (K0.5Na0.5)2y (Sr0.61 Ba0.39)1-yNb2O6 (KNSBN) crystal at 633 nm with low incident-light intensities (10(-3) W/cm2). We calculated the expected images which show good agreement with the images that we have experimentally observed.
