标题:An Integrated Gate Driver with Active Delay Control Method for Series Connected SiC MOSFETs
作者:Wang, Panrui ;Gao, Feng ;Jing, Yang ;Hao, Quanrui ;Li, Kejun ;Zhao, Haoran
作者机构:[Wang, Panrui ;Gao, Feng ;Jing, Yang ;Hao, Quanrui ;Li, Kejun ;Zhao, Haoran ] School of Electrical Engineering, Shandong University, Jinan, China
会议名称:19th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2018
会议日期:25 June 2018 through 28 June 2018
来源:2018 IEEE 19th Workshop on Control and Modeling for Power Electronics, COMPEL 2018
出版年:2018
DOI:10.1109/COMPEL.2018.8459904
关键词:delay control; series connected; SiC MOSFET; voltage balance
摘要:Series connected SiC MOSFETs technology can apply low rated voltage power device to medium or high voltage applications. However, voltage unbalance problem limits its performance. In this paper, an integrated gate driver with active delay control method for series connected SiC MOSFETs is presented to achieve voltage balance. The main idea is to delay the drive signal for a time period to compensate its deviation between different SiC MOSFET. The delay action is implemented by a delay line IC to adapt the fast switching process of SiC MOSFET. The proposed gate driver provides a closed loop control for series connected SiC MOSFETs. It can effectively balance the voltage without slowing down the switching speed or inducing extra losses, and the effectiveness of the proposed gate driver has been verified by experimental results. © 2018 IEEE.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85054550593&doi=10.1109%2fCOMPEL.2018.8459904&partnerID=40&md5=881aede54f953eda13416b96dbf77fbf
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