标题:Investigation on tuning of WS2/SiC band gap with an external electric field
作者:Ma, Yuke; Xu, Xian'gang
通讯作者:Xu, XG
作者机构:[Ma, Yuke; Xu, Xian'gang] Shan Dong Univ, Inst Crystalmat, 27 Shan South Rd, Jinan 250100, Shandong, Peoples R China.
会议名称:10th International Conference on Thin Film Physics and Applications (TFPA)
会议日期:MAY 19-22, 2019
来源:TENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS (TFPA 2019)
出版年:2019
卷:11064
DOI:10.1117/12.2538565
关键词:WS2 film on SiC; tunable band gap; external electric field; The first; principle calculation; Quantum Espresso
摘要:An optical material WS2 thin film on SiC substrate was synthesized. Both 15nm and 150nm thickness of WS2 films were deposited on a n-doped SiC substrate by pulsed laser deposition (PLD) method. Tungsten disulfide films were superimposed face to face, and silicon carbide was used as the electrode to apply an electric field ranging from 0V/nm to 0.18v /nm. The experimental results showed that band gap were continuously tunable from 2.017ev to 1.507ev. The first principle calculation by using Quantum Espresso also was performed to simulate the band gap change with the increase of an external electric field. It is found that the band gap of WS2/SiC film changes from 1.973ev to 1.488ev as an electric field applied perpendicularly to the film ranging from 0V/nm to 0.18v /nm. The consistency of experimental results and the first principle calculation was found.
收录类别:CPCI-S
资源类型:会议论文
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