标题：In situ preparation of high dielectric constant, low-loss ferroelectric BaTiO3films on Si at 500°C
作者：Yuan, Meiling ;Zhang, Wei ;Wang, Xianyang ;Pan, Wei ;Wang, Li ;Ouyang, Jun
作者机构：[Yuan, Meiling ;Zhang, Wei ;Wang, Xianyang ;Wang, Li ;Ouyang, Jun ] Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials, S 更多
来源：Applied Surface Science
摘要：In an attempt to build a CMOS-compatible process with reduced thermal budget for the integration of barium titanate ferroelectric films into Si-based MEMS and IC devices, BaTiO3films were prepared on Pt/Ti/(1 0 0) Si substrate at 500°C by a rf magnetron sputtering process without a post-growth annealing. Effects of substrate temperature, gas composition, gas pressure and target power on the microstructure of these films were analyzed in details. The BaTiO3films deposited under the conditions of 500°C substrate temperature, 120 W target power and 0.3 Pa gas pressure with a 4:1 Ar/O2flow ratio displayed good ferroelectric and dielectric properties. The microstructure analysis by XRD and AFM indicated that these BaTiO3films were polycrystalline with a preferred (0 0 1) orientation and a smooth surface with a Ra ∼ 1.7 nm. The twice remnant polarization 2Pr was 10.9 μC/cm2@ 1 kHz, while the relative dielectric constant and dielectric loss tangent were measured to be 720/0.042 @ 1 kHz, and 360/0.038 @ 1 MHz, respectively. © 2013 Elsevier B.V.