来源：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版年：2020
卷：31
期：8
页码：5866-5871
DOI：10.1007/s10854-019-02679-x
摘要：Herein, we report a high-k Al1-xTixO dielectric films and device applications via a facile low-temperature lightwave irradiation process. The Al1-xTixO films possess the smooth surface with subnanometer roughness. The successful doping of Ti in Al2O3 films was confirmed via several characterizations. The properties of Al1-xTixO films are highly dependent on the ratio of Ti. With the introduction of 20% Ti, Al1-xTixO films obtain much better properties than single TiO2 and Al2O3. The leakage current density reached 6.4x10(-8) A/cm(2), and its capacitance is as high as 168 nF/cm(2) (at 1000 Hz). For the device applications, InZnO/Al1-xTixO TFTs show enhanced performance, such as a great field-effect mobility of 12.5 cm(2)/Vs, while InZnO/Al2O3 TFTs have a mobility of 5.7 cm(2)/Vs. Moreover, the operating voltage is as low as 3 V. The low-temperature lightwave irradiated Al1-xTixO films, without high temperature or vacuum process, reveal great potential for the low-cost- but high-performance electronics.
