标题:Ti doping enhanced alumina dielectrics for low-voltage thin-film transistors via low-temperature lightwave irradiation
作者:Wang, Sumei; Xia, Guodong
通讯作者:Xia, Guodong
作者机构:[Xia, Guodong] Qilu Univ Technol, Dept Mat & Engn, Shandong Acad Sci, Jinan 250353, Peoples R China.; [Wang, Sumei; Xia, Guodong] Shandong Univ, Key 更多
会议名称:Chinese Materials Conference (CMC)
会议日期:JUL 10-14, 2019
来源:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
出版年:2020
卷:31
期:8
页码:5866-5871
DOI:10.1007/s10854-019-02679-x
摘要:Herein, we report a high-k Al1-xTixO dielectric films and device applications via a facile low-temperature lightwave irradiation process. The Al1-xTixO films possess the smooth surface with subnanometer roughness. The successful doping of Ti in Al2O3 films was confirmed via several characterizations. The properties of Al1-xTixO films are highly dependent on the ratio of Ti. With the introduction of 20% Ti, Al1-xTixO films obtain much better properties than single TiO2 and Al2O3. The leakage current density reached 6.4x10(-8) A/cm(2), and its capacitance is as high as 168 nF/cm(2) (at 1000 Hz). For the device applications, InZnO/Al1-xTixO TFTs show enhanced performance, such as a great field-effect mobility of 12.5 cm(2)/Vs, while InZnO/Al2O3 TFTs have a mobility of 5.7 cm(2)/Vs. Moreover, the operating voltage is as low as 3 V. The low-temperature lightwave irradiated Al1-xTixO films, without high temperature or vacuum process, reveal great potential for the low-cost- but high-performance electronics.
收录类别:CPCI-S;EI;SCIE
资源类型:会议论文;期刊论文
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