标题:Electrical and magnetic properties of (Al, Co) co-doped ZnO films deposited by RF magnetron sputtering
作者:Sun, Hui; Chen, Sheng-Chi; Wang, Chung-Hsien; Lin, Yu-Wei; Wen, Chao-Kuang; Chuang, Tung-Han; Wang, Xin; Lin, Song-Sheng; Dai, Ming-Ji 更多
通讯作者:Chen, ShengChi;Chen, SC;Chen, SC
作者机构:[Sun, Hui] Shandong Univ Weihai, Sch Space Sci & Phys, 180 Wenhuaxi Rd, Weihai 180264209, Peoples R China.; [Chen, Sheng-Chi; Wang, Chung-Hsien; Lin 更多
会议名称:9th International Conference on Technological Advances of Thin Films and Surface Coatings (ThinFilms)
会议日期:JUL 17-20, 2018
来源:SURFACE & COATINGS TECHNOLOGY
出版年:2019
卷:359
页码:390-395
DOI:10.1016/j.surfcoat.2018.10.105
关键词:(Al, Co)-ZnO; Electronic property; Magnetic property; RF sputtering;; Curie temperature
摘要:In this work, (Al, Co)-ZnO films were co-sputtered on glass substrate through radio frequency sputtering at 100 degrees C. The film's structure, electrical and magnetic properties as a function of Al doping content is investigated. The results indicate that (Al, Co)-ZnO films crystallinity can be suppressed by Co doping or (Co, Al) co-doping. With the substitution of Zn2+ by Al3+, the film's conductivity improves. All the films present ferromagnetic behavior at room temperature. Upon increasing the Al doping amount, the film's saturation magnetization expresses a carrier-concentration dependent behavior. Three different regions can be defined, where BMP model and carrier-mediated exchange mechanisms play a role in the various regions.
收录类别:CPCI-S;EI;SCOPUS;SCIE
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059202149&doi=10.1016%2fj.surfcoat.2018.10.105&partnerID=40&md5=d64edb51cead0b671f07f2b897d4656d
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