标题：Lattice modification in KTiOPO4by hydrogen and helium sequentially implantation in submicrometer depth
作者：Ma, Changdong ;Lu, Fei ;Xu, Bo ;Fan, Ranran
作者机构：[Ma, Changdong ;Lu, Fei ;Xu, Bo ;Fan, Ranran ] School of Information Science and Engineering, Shandong University, Jinan, Shandong; 250100, China;[Ma, 更多
来源：Applied Physics Letters
摘要：We investigated lattice modification and its physical mechanism in H and He co-implanted, z-cut potassium titanyl phosphate (KTiOPO4). The samples were implanted with 110 keV H and 190 keV He, both to a fluence of 4 × 1016cm-2, at room temperature. Rutherford backscattering/channeling, high-resolution x-ray diffraction, and transmission electron microscopy were used to examine the implantation-induced structural changes and strain. Experimental and simulated x-ray diffraction results show that the strain in the implanted KTiOPO4crystal is caused by interstitial atoms. The strain and stress are anisotropic and depend on the crystal's orientation. Transmission electron microscopy studies indicate that ion implantation produces many dislocations in the as-implanted samples. Annealing can induce ion aggregation to form nanobubbles, but plastic deformation and ion out-diffusion prevent the KTiOPO4surface from blistering.
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