标题:The metal-free magnetism and ferromagnetic narrow gap semiconductor properties in graphene-like carbon nitride
作者:Li, Hengshuai; Hu, Haiquan; Bai, Chenglin; Bao, Chunjiang; Feng, Zhenbao; Guo, Feng
作者机构:[Li, Hengshuai; Bao, Chunjiang] Liaocheng Univ, Sch Mech & Automot Engn, Liaocheng 252000, Peoples R China.; [Li, Hengshuai] Shandong Univ, Sch Phys 更多
通讯作者:Li, Hengshuai;Li, HS
通讯作者地址:[Li, HS]Liaocheng Univ, Sch Mech & Automot Engn, Liaocheng 252000, Peoples R China.
来源:PHYSICA B-CONDENSED MATTER
出版年:2019
卷:555
页码:91-95
DOI:10.1016/j.physb.2018.11.003
关键词:Metal-free magnetism; Electron spin polarization; Narrow gap; semiconductor properties; Ferromagnetic ordering; Monte Carlo; simulations
摘要:In spintronics, if a two-dimensional (2D) organic metal-free material has stable magnetism and narrow gap semiconductor properties, it will have a very bright application prospect. A graphene-like carbon nitride (g-C13N13) that we design just meets these requirements. As a new structure, firstly the stability of the g-C13N13 has been verified. It has stable electron spin polarization and the magnetic moment of each primitive cell is 1 mu(B). It exhibits ferromagnetic narrow gap semiconductor properties through our analysis of energy band structure and charge density. Ferromagnetic ordering between two adjacent primitive cells is stable. The Monte Carlo simulation using the Ising model shows the Curie temperature material is 204 K. Our research is an inspiration for the applications of this kind of materials in spintronics devices.
收录类别:EI;SCOPUS;SCIE
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85057590582&doi=10.1016%2fj.physb.2018.11.003&partnerID=40&md5=757f8b9f883b073656028ce976b30864
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