标题:Preparation and characterization of single crystalline SnO_2 films deposited on TiO_2(0 01)byMOCVD
作者:Caina Luan;Jin Ma;Zhen Zhu;Lingyi Kong;Qiaoqun Yu
通讯作者:Ma, J
作者机构:[Luan, C] School of Physics, Shandong University, Jinan, Shandong 250100, China;[ Ma, J] School of Physics, Shandong University, Jinan, Shandong 25010 更多
会议名称:16th International Conference on Crystal Growth (ICCG16)/14th International Conference on Vapor Growth and Epitaxy (ICVGE14)
会议日期:AUG 08-13, 2010
来源:Journal of Crystal Growth
出版年:2011
卷:318
期:1
页码:599-601
DOI:10.1016/j.jcrysgro.2010.10.056
关键词:A3. Metalorganic chemical vapor deposition;B1. Oxides;B2. Semiconducting Ⅱ-Ⅵ materials
摘要:Tin oxide (SnO_2) epitaxial thin films have been prepared on TiO_2 (001) substrates at different temperatures by metalorganic chemical vapor deposition (MOCVD) method. The obtained films were pure SnO_2 with the tetragonal rutile structure. An in-plane orientation relationship of (0 0 1) SnO_2|| (0 0 1) TiO_2 with [10 0] SnO_2||[10 0] and [010]SnO_2||[0 1 0]TiO_2 between the film and substrate was determined. The SnO_2 film prepared at 600 °C presented the best single crystalline structure. The average transmittance of the SnO_2 samples in the visible range exceeded 68%. In the photoluminescence spectra, a broad luminescence band centered at 615 nm was observed.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:5
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952736454&doi=10.1016%2fj.jcrysgro.2010.10.056&partnerID=40&md5=b17d1963aaf8fafdf0f84317f5c1eb48
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