标题:Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations
作者:Wu, Jixuan ;Han, Dan ;Yang, Wenjing ;Chen, Shiyou ;Jiang, Xiangwei ;Chen, Jiezhi
作者机构:[Wu, Jixuan ;Yang, Wenjing ;Chen, Jiezhi ] School of Information Science and Engineering, Shandong University, Jinan, China;[Han, Dan ;Chen, Shiyou ] 更多
会议名称:63rd IEEE International Electron Devices Meeting, IEDM 2017
会议日期:2 December 2017 through 6 December 2017
来源:Technical Digest - International Electron Devices Meeting, IEDM
出版年:2018
页码:4.5.1-4.5.4
DOI:10.1109/IEDM.2017.8268327
摘要:Aiming at comprehensive understandings on the underlying physics of the charge diffusion in charge-trap (CT) 3D NAND flash memories, various hydrogen (H) and oxygen (O) incorporated defects in SiN CT layer are studied via ab initio calculations. It is found that, O atom incorporated defects are extremely shallow (∼0.18eV) and could be the main reason of fast charge loss, while H atom incorporated defects (VN-H, SiN-H) should be the dominant traps in SiN CT layer. More importantly, though H passivation is effective to eliminate shallow traps, excessive H will generate other shallow traps on the contrary. Then, with further discussions on H bond stabilities, it is proposed that replacing H with Deuterium (D) could be an effective approach to suppress shallow trap generations during Write/Erase cycling and improve memory reliabilities. © 2017 IEEE.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85045218956&doi=10.1109%2fIEDM.2017.8268327&partnerID=40&md5=96e08d6495d8dc50eae9ec9b1b8fd191
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