标题：Investigation of magnetism in Fe and Cu ion implanted indium oxide films
作者：J.W. Wanga;Y.X. Chen;Y. Shi
作者机构：Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan Univer
来源：Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms
关键词：In_2O_3 film;Ion implantation;Diluted magnetic semiconductor (DMS);Room temperature ferromagnetism
摘要：Diluted magnetic semiconductor based on indium oxide has been prepared by transition metal ion implantation. Fe and Cu ions have been implanted into pulsed laser deposition prepared pure In_2O_3 films by metal vapor vacuum arc source with doses from 5 × 10~(15) cm~(-2) to 1 × 10~(17) cm~(-2), respectively. The implanted samples are annealed in the air subsequently. The structure of In_2O_3 films is characterized by X-ray diffraction. X-ray photoelectron spectroscopy measurements are applied to confirm the electronic state of the implanted ions. Superconducting quantum interference device measurements at room temperature disclose that the diamagnetic In_2O_3 films turned to be ferromagnetic after Fe and Cu ion implantation. The correlation between ferromagnetism and implantation conditions is tested. The ferromagnetism is attributed to the bound magnetic polarons formed by Fe, Cu ion implantation.