标题:Growth of Large-Size SnS Thin Crystals Driven by Oriented Attachment and Applications to Gas Sensors and Photodetectors
作者:Wang, Jun; Lian, Gang; Xu, Zhenghao; Fu, Chen; Lin, Zhaojun; Li, Liyi; Wang, Qilong; Cui, Deliang; Wong, Ching-Ping
作者机构:[Wang, Jun; Lian, Gang; Cui, Deliang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.; [Wang, Jun; Xu, Zhenghao; Wang, Qilo 更多
通讯作者:Lian, Gang
通讯作者地址:[Lian, G; Cui, DL]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;[Lian, G; Wong, CP]Georgia Inst Technol, Sch Mat Sci & Engn, 更多
来源:ACS APPLIED MATERIALS & INTERFACES
出版年:2016
卷:8
期:15
页码:9545-9551
DOI:10.1021/acsami.6b01485
关键词:thin crystals; tin sulfide; oriented attachment; quantum dots; gas; sensors; photodetectors
摘要:Freestanding large-size SnS thin crystals are synthesized via two-dimensional oriented attachment (OA) growth of colloidal quantum dots (CQDs) in a novel high, pressure solvothermal reaction. The SnS thin crystals present a uniform rectangular shape with a lateral size of 20-30 um and thickness of <10 nm. The evolution process demonstrates that a synergetic effect of pressure, aging time and organic ligands results in polycrystal-to-monocrystal formation and defect annihilation. Furthermore, gas sensor and photodetector devices, based on SnS thin single crystals, are also prepared. The sensing devices present high sensitivity, superior selectivity, low detection limit (<< 100 ppb) and reversibility to NO2 at room temperature. The fabricated photodetector devices exhibit a high responsivity of 2.04 x 10(3) A W1- and high external quantum efficiency of similar to 4.75 X 10(5) % at 532 nm, which ate much higher than most of the photodetector devices.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:21
Scopus被引频次:23
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84966269394&doi=10.1021%2facsami.6b01485&partnerID=40&md5=e8dc03e17455aba9ff4deec3832801d5
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