标题:Atomic defects in monolayer WSe2tunneling FETs studied by systematic ab initio calculations
作者:Wu, Jixuan ;Fan, Zhiqiang ;Chen, Jiezhi ;Jiang, Xiangwei
作者机构:[Wu, Jixuan ;Chen, Jiezhi ] School of Information Science and Engineering, Shandong University, Jinan; 250000, China;[Wu, Jixuan ;Fan, Zhiqiang ;Jiang 更多
来源:Applied Physics Express
出版年:2018
卷:11
期:5
DOI:10.7567/APEX.11.054001
摘要:Atomic defects in monolayer WSe2tunneling FETs (TFETs) are studied through systematic ab initio calculations aiming at performance predictions and enhancements. The effects of various defect positions and different passivation atoms are characterized in WSe2TFETs by rigorous ab initio quantum transport simulations. It is suggested that the Se vacancy (VSe) defect located in the gate-controlled channel region tends to increase the OFF current (Ioff), whereas it can be well suppressed by oxygen passivation. It is demonstrated that chlorine (Cl) passivation at the source-side tunneling region can largely suppress Ioff, leading to an impressively improved on–off ratio (Ion/Ioff) compared with that without any defect. However, it is also observed that randomly positioned atomic defects tend to induce significant fluctuation of the TFET output. Further discussions are made with focus on the performance-variability trade-off for robust circuit design.
© 2018 The Japan Society of Applied Physics.
收录类别:EI
资源类型:期刊论文
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