标题:Theoretical Study of the Properties of Si Nanowire Electronic Devices
作者:J. C. Dong;H. Li;F. W. Sun
作者机构:[Dong, J.C] Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 更多
通讯作者:Li, H
通讯作者地址:[Li, H]Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China.
来源:The journal of physical chemistry, C. Nanomaterials and interfaces
出版年:2011
卷:115
期:28
页码:13901-13906
DOI:10.1021/jp2007045
摘要:Electron-transport properties of three terminal field-effect devices based on both pure and doped Si nanowires with diameters less than 1 nm are theoretically studied. The results indicate that some devices possess electronic functions, such as current amplification and robust negative differential resistance accompanied with large on-off ratios. Three kinds of mechanisms are proposed to interpret different negative differential resistance phenomena of some devices investigated in this paper. Not only structures of nanowires but also applied bias can change the mechanism of negative differential resistance. Furthermore, the performance of these devices is mainly dependent on the doping and atomic arrangement of Si nanowires. This work provides a deep insight into the electron-transport properties of functional electronic nanodevices.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:7
Scopus被引频次:11
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960418127&doi=10.1021%2fjp2007045&partnerID=40&md5=f0d18e2d0998e5d0635e0ab8cb5757a4
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