标题：Electronic band-gap modified passive silicon optical modulator at telecommunications wavelengths
作者：Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Liu, Xiangdong; Lu, Qingming; Wang, Jiyang
作者机构：[Zhang, Rui; Yu, Haohai; Zhang, Huaijin; Wang, Jiyang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.; [Zhang, Rui; Yu, Ha 更多
通讯作者地址：[Yu, HH]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
摘要：The silicon optical modulator is considered to be the workhorse of a revolution in communications. In recent years, the capabilities of externally driven active silicon optical modulators have dramatically improved. Self-driven passive modulators, especially passive silicon modulators, possess advantages in compactness, integration, low-cost, etc. Constrained by a large indirect band-gap and sensitivity-related loss, the passive silicon optical modulator is scarce and has been not advancing, especially at telecommunications wavelengths. Here, a passive silicon optical modulator is fabricated by introducing an impurity band in the electronic band-gap, and its nonlinear optics and applications in the telecommunications-wavelength lasers are investigated. The saturable absorption properties at the wavelength of 1.55 mu m was measured and indicates that the sample is quite sensitive to light intensity and has negligible absorption loss. With a passive silicon modulator, pulsed lasers were constructed at wavelengths at 1.34 and 1.42 mu m. It is concluded that the sensitive self-driven passive silicon optical modulator is a viable candidate for photonics applications out to 2.5 mu m.