标题:Valley polarization and ferroelectricity in a two-dimensional GaAsC6 monolayer
作者:Ma, Xikui; Ai, Haoqiang; Gao, Han; Zhang, Xiaoming; Li, Weifeng; Zhao, Mingwen
作者机构:[Ma, Xikui; Ai, Haoqiang; Gao, Han; Zhang, Xiaoming; Li, Weifeng; Zhao, Mingwen] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; 更多
通讯作者:Zhao, MW;Zhao, MW;Zhao, MW
通讯作者地址:[Zhao, MW]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;[Zhao, MW]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, 更多
来源:PHYSICAL CHEMISTRY CHEMICAL PHYSICS
出版年:2019
卷:21
期:7
页码:3954-3959
DOI:10.1039/c8cp07444e
摘要:Valley polarization and ferroelectricity are the two basic concepts in electronic device applications. However, the coexistence of these two scenarios in one material has not been reported. Here, using first-principles calculations, we demonstrated that the two-dimensional GaAsC6 monolayer which is a hybrid structure of GaAs and graphene has a pair of inequivalent valleys with opposite Berry curvatures and an intrinsic out-of-plane spontaneous electric polarization. It also has a direct band gap of about 1.937 eV and a high carrier mobility of about 1.80 x 10(5) cm(2) V-1 s(-1), which are promising for electronic device applications. The integration of valley polarization and ferroelectricity in a single material offers a promising platform for the design of electronic devices.
收录类别:SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85061484226&doi=10.1039%2fc8cp07444e&partnerID=40&md5=ed30f7e727c3b0b4ebce9263eac7c4fb
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