标题：Valley polarization and ferroelectricity in a two-dimensional GaAsC6 monolayer
作者：Ma, Xikui; Ai, Haoqiang; Gao, Han; Zhang, Xiaoming; Li, Weifeng; Zhao, Mingwen
作者机构：[Ma, Xikui; Ai, Haoqiang; Gao, Han; Zhang, Xiaoming; Li, Weifeng; Zhao, Mingwen] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.; 更多
通讯作者：Zhao, MW;Zhao, MW;Zhao, MW
通讯作者地址：[Zhao, MW]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;[Zhao, MW]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, 更多
来源：PHYSICAL CHEMISTRY CHEMICAL PHYSICS
摘要：Valley polarization and ferroelectricity are the two basic concepts in electronic device applications. However, the coexistence of these two scenarios in one material has not been reported. Here, using first-principles calculations, we demonstrated that the two-dimensional GaAsC6 monolayer which is a hybrid structure of GaAs and graphene has a pair of inequivalent valleys with opposite Berry curvatures and an intrinsic out-of-plane spontaneous electric polarization. It also has a direct band gap of about 1.937 eV and a high carrier mobility of about 1.80 x 10(5) cm(2) V-1 s(-1), which are promising for electronic device applications. The integration of valley polarization and ferroelectricity in a single material offers a promising platform for the design of electronic devices.