标题：Phase Field Modeling of the Effects of Gradient Energy Coefficients on the Void-matrix Interface Thickness during Czochralski Silicon Crystal
作者：Guan, X. J.; Wang, J.
通讯作者：Guan, XJ;Guan, XJ
作者机构：[Guan, X. J.; Wang, J.] Shandong Univ, Sch Mat Sci & Engn, Jinan 250061, Peoples R China.; [Guan, X. J.; Wang, J.] Shandong Univ, State Key Lab Crys 更多
会议名称：6th International Conference on Manufacturing Science and Engineering (ICMSE)
会议日期：NOV 28-29, 2015
来源：PROCEEDINGS OF THE 2015 6TH INTERNATIONAL CONFERENCE ON MANUFACTURING SCIENCE AND ENGINEERING
关键词：Silicon crystal; Czochralski process; Phase field modeling; Gradient; energy coefficient; Void-matrix interface thickness
摘要：For investigating the effects of gradient energy coefficients on the void-matrix interface thickness during Czochralski silicon single crystal, an established phase field model and the corresponding program code were used to simulate the evolution process of a single void. Based on the given criterion of interface thickness, sixteen simulating cases were performed to study the related influence laws. The results show that the void-matrix interface thickness is influenced by both of the gradient energy coefficients of composition and chemical ordering, and the increases of gradient energy coefficients contribute to the enlargement of interface thickness.