标题:Origin of d(0) magnetism in II-VI and III-V semiconductors by substitutional doping at anion site
作者:Yang, Kesong; Wu, Rongqin; Shen, Lei; Feng, Yuan Ping; Dai, Ying; Huang, Baibiao
作者机构:[Yang, Kesong; Wu, Rongqin; Shen, Lei; Feng, Yuan Ping; Huang, Baibiao] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.; [Yang, Kesong; 更多
通讯作者:Yang, KS
通讯作者地址:[Yang, KS]Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore.
来源:PHYSICAL REVIEW B
出版年:2010
卷:81
期:12
DOI:10.1103/PhysRevB.81.125211
摘要:By first-principles electronic structure calculations on carbon and nitrogen doped II-VI and III-V semiconductors, we demonstrate that substitutional doping at anion site by 2p light elements results in spontaneous spin polarization. However, to have a stable magnetic ground state, the 2p orbitals of the dopant must be sufficiently localized in the energy gap of the host semiconductors. The spin magnetic moment is sensitive to the relative strength of electronegativities of the dopant and the anion in the host semiconductor. Dopants with weaker electronegativity than anion in the host semiconductor should be used to produce magnetic semiconductor by anion substitutional doping with 2p light elements.
收录类别:SCOPUS;SCIE
WOS核心被引频次:78
Scopus被引频次:79
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955150603&doi=10.1103%2fPhysRevB.81.125211&partnerID=40&md5=86898ac7650c7001e225d2a9f755fe15
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