标题:Mn-doped ZnO transparent conducting films deposited by DC magnetron sputtering
作者:Zhang, Hua-fu; Liu, Rui-jin; Liu, Han-fa; Lei, Cheng-xin; Feng, Dong-tai; Yuan, Chang-Kun
作者机构:[Zhang, Hua-fu; Liu, Rui-jin; Liu, Han-fa; Lei, Cheng-xin; Feng, Dong-tai; Yuan, Chang-Kun] Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peo 更多
通讯作者:Zhang, Hf
通讯作者地址:[Zhang, HF]Shandong Univ Technol, Sch Sci, Zibo 255049, Shandong, Peoples R China.
来源:MATERIALS LETTERS
出版年:2010
卷:64
期:5
页码:605-607
DOI:10.1016/j.matlet.2009.12.015
关键词:Mn-doped zinc oxide; Transparent conducting films; DC magnetron; sputtering; Thickness
摘要:Mn-doped zinc oxide (ZnO:Mn) thin films with low resistivity and relatively high transparency were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. Influence of film thickness on the properties of ZnO:Mn films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that all the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. As the thickness increases from 144 to 479 nm, the crystallite size increases while the electrical resistivity decreases. However, as the thickness increases from 479 to 783 nm, the crystallite size decreases and the electrical resistivity increases. When film thickness is 479 nm, the deposited films have the lowest resistivity of 2.1 x 10(-4) Omega cm and a relatively high transmittance of above 84% in the visible range. (C) 2009 Elsevier B.V. All rights reserved.
收录类别:EI;SCIE
WOS核心被引频次:14
资源类型:期刊论文
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