标题:Analysis of Grit Cut Depth in Fixed-Abrasive Diamond Wire Saw Slicing Single Crystal Silicon
作者:Gao, Yufei; Ge, Peiqi
通讯作者:Gao, Y(yfgao@sdu.edu.cn)
作者机构:[Gao, Yufei; Ge, Peiqi] Shandong Univ, Key Lab High Efficiency & Clean Mech Manufacture, Minist Educ, Sch Mech Engn, Jinan 250061, Peoples R China.
会议名称:4th Conference on Application of Diamond and Related Materials in China (CADRM2010)/1st International Symposium on Advances in Brazed Superabrasive Tools (ISABS2010)
会议日期:AUG 19-23, 2010
来源:APPLICATION OF DIAMOND AND RELATED MATERIALS
出版年:2011
卷:175
页码:72-76
DOI:10.4028/www.scientific.net/SSP.175.72
关键词:Grit cut depth; Wire saw; Single crystal silicon; Process parameter
摘要:A mathematical model to calculate the grit average cut depth in wire sawing single crystal silicon was founded. So the grit average cut depths were calculated theoretically by choosing different process parameters, and influences of process parameters on grit cut depths of slicing silicon crystal were analyzed. Analysis results indicate that the grit average cut depth relates to the silicon mechanical properties, grit shape and size, wire speed and ingot feed speed, etc. And there is a monotone increasing non-linear correlation between grit average cut depth and the ratio i value of ingot feed speed and wire speed, when the i value is lower, the average grit cut depth is lower.
收录类别:CPCI-S;EI;SCOPUS
WOS核心被引频次:3
Scopus被引频次:3
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-79961063896&doi=10.4028%2fwww.scientific.net%2fSSP.175.72&partnerID=40&md5=035b196b45c88f19ace6d08a230f8640
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