标题:Electrical properties of Bi3.15Sm0.85Ti3O12 thin films on Si for a metal-ferroelectric-semiconductor-metal structure
作者:Liu, WL; Xia, HR; Han, H; Wang, XQ
作者机构:[Liu, WL; Xia, HR; Han, H; Wang, XQ]Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China.;[Liu, WL; Xia, HR; Han, H; Wang, 更多
通讯作者:Liu, WL
通讯作者地址:[Liu, WL]Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China.
来源:JOURNAL OF MATERIALS SCIENCE
出版年:2004
卷:39
期:12
页码:4005-4007
DOI:10.1023/B:JMSC.0000031482.42755.08
摘要:The electrical properties of the Bi3.15Sm0.85Ti 3O12 (BSmT) thin films were investigated. The BSmT films were developed on n-type Si (100) substrates using metal-organic decomposition (MOD) method. The polycrystalline behavior of the films, which were annealed at 700°C for 1h, was analyzed using X-ray diffraction. The dielectric properties and the capacitance-voltage characteristic hysteresis curve showed that BSmT thin films had the potential to be used in the memories of ferroelectric field effect transistor (FFET).
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-3042716857&doi=10.1023%2fB%3aJMSC.0000031482.42755.08&partnerID=40&md5=5a8a699618f9e38c17534db4c8232a07
TOP