标题：Electrical properties of Bi3.15Sm0.85Ti3O12 thin films on Si for a metal-ferroelectric-semiconductor-metal structure
作者：Liu, WL; Xia, HR; Han, H; Wang, XQ
作者机构：[Liu, WL; Xia, HR; Han, H; Wang, XQ]Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China.;[Liu, WL; Xia, HR; Han, H; Wang, 更多
通讯作者地址：[Liu, WL]Shandong Univ, Sch Phys & Microelect, Jinan 250100, Peoples R China.
来源：JOURNAL OF MATERIALS SCIENCE
摘要：The electrical properties of the Bi3.15Sm0.85Ti 3O12 (BSmT) thin films were investigated. The BSmT films were developed on n-type Si (100) substrates using metal-organic decomposition (MOD) method. The polycrystalline behavior of the films, which were annealed at 700°C for 1h, was analyzed using X-ray diffraction. The dielectric properties and the capacitance-voltage characteristic hysteresis curve showed that BSmT thin films had the potential to be used in the memories of ferroelectric field effect transistor (FFET).