标题：Broadband Few-Layer MoS_2 Saturable Absorbers
作者：Shuxian Wang;Haohai Yu;Huaijin Zhang;Aizhu Wang;Mingwen Zhao;Yanxue Chen;Liangmo Mei;Jiyang Wang
作者机构：[Wang, S] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;[ Yu, H] State Key Labor 更多
通讯作者地址：[Yu, HH]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
摘要：Since the discovery of carbon nanotube and graphene, low-dimensional crystals have attracted growing research interest for potential applications in next-generation nano-optoelec-tronic devices. In addition to carbon materials, atomic-layered transition-metal dichalcogenides exhibit physical properties that are distinct from their bulk states. Molybdenum sulfide (MoS_2) is representative of transition-metal dichalcogenides. Investigation has revealed that MoS_2 in monolayer form becomes a direct bandgap semiconductor with a gap in the visible range, whereas the gap is indirect for the multilayered material.\'5\'61 Combined with superior strength and flexibility, it has been proposed that 2D MoS_2 films have promising optoelectronic applications in electronics and optoelectronics.