标题:Broadband Few-Layer MoS_2 Saturable Absorbers
作者:Shuxian Wang;Haohai Yu;Huaijin Zhang;Aizhu Wang;Mingwen Zhao;Yanxue Chen;Liangmo Mei;Jiyang Wang
作者机构:[Wang, S] State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China;[ Yu, H] State Key Labor 更多
通讯作者:Yu, H
通讯作者地址:[Yu, HH]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:Advanced Materials
出版年:2014
卷:26
期:21
页码:3538-3544
DOI:10.1002/adma.201306322
摘要:Since the discovery of carbon nanotube and graphene, low-dimensional crystals have attracted growing research interest for potential applications in next-generation nano-optoelec-tronic devices. In addition to carbon materials, atomic-layered transition-metal dichalcogenides exhibit physical properties that are distinct from their bulk states. Molybdenum sulfide (MoS_2) is representative of transition-metal dichalcogenides. Investigation has revealed that MoS_2 in monolayer form becomes a direct bandgap semiconductor with a gap in the visible range, whereas the gap is indirect for the multilayered material.\'5\'61 Combined with superior strength and flexibility, it has been proposed that 2D MoS_2 films have promising optoelectronic applications in electronics and optoelectronics.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:315
Scopus被引频次:333
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-84901943269&doi=10.1002%2fadma.201306322&partnerID=40&md5=ba7ccd4f928312705646fb74bbbc92b0
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