标题：Reversible phase switching between antiferromagnetic SrCoO2.5 and ferromagnetic SrCoO3-delta by a flexible solid-state electrolyte gate
作者：Wang, Dong; Meng, Lingpan; Wei, Lin; Shi, Peng; Chen, Yanxue; Yan, Shishen; Tian, Yufeng; Liu, Guolei; Mei, Liangmo
作者机构：[Wang, Dong; Meng, Lingpan; Shi, Peng; Chen, Yanxue; Yan, Shishen; Tian, Yufeng; Liu, Guolei; Mei, Liangmo] Shandong Univ, Sch Phys, Jinan 250100, Sha 更多
通讯作者：Chen, YX;Chen, YX
通讯作者地址：[Chen, YX]Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China;[Chen, YX]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, 更多
来源：JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
关键词：Strontium cobaltite; Electric-field control; Solid-state device; Phase; control
摘要：Manipulation of oxygen vacancies (V-o) in transition metal oxides (TMOs) can largely alter their physical and chemical properties, such as electrical conductivity, magnetic state, optical band-gap, and electrocatalytic reactivity. Many experimental and theoretical works have been conducted to study the formation/annihilation of V-o and its corresponding effect on the properties in TMOs. In this paper, a solid-state approach to modulate the oxygen stoichiometry in high quality SrCoOx epitaxial thin films was demonstrated. Dependence of the magnetic and electrical conducing properties on V-o was investigated. Room temperature reversible phase switching between brownmillerite antiferromagnetic insulating SrCoO2.5 and perovskite ferromagnetic metallic SrCoO3-delta was achieved by electric-field induced oxygen non-stoichiometry. This room temperature reversible phase switching indicates that SrCoOx thin films are a promising candidate for practical applications in resistive random access memory and spintronic devices.