标题:High performance active image sensor pixel design with circular structure oxide TFT
作者:Rui Geng;Yuxin Gong
作者机构:School of International Education, Dalian Polytechnic University, Dalian 116034, China;School of Information Science and Engineering, Shandong Univers 更多
通讯作者:Geng, R(gengrui@dlpu.edu.cn)
通讯作者地址:[Geng, R] School of International Education, Dalian Polytechnic UniversityChina;
来源:半导体学报(英文版)
出版年:2019
卷:40
期:2
页码:21-24
DOI:10.1088/1674-4926/40/2/022402
关键词:a-IGZO TFT;active image sensor;circular structure;high gain
摘要:We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide (aIGZO) thin-film transistors (TFTs) with a circular structure.The TFT,configured with the inner electrode as source and outer electrode as drain,typically exhibits good saturation electrical characteristics,where the device has a constant drive current despite variations in drain voltage.Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape,the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs.They can be used as driving TFTs in active image sensor circuits.They are,therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85062477105&doi=10.1088%2f1674-4926%2f40%2f2%2f022402&partnerID=40&md5=9d62895d1df7e3773a1877114c5ad7f3
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