标题：High performance active image sensor pixel design with circular structure oxide TFT
作者：Rui Geng;Yuxin Gong
作者机构：School of International Education, Dalian Polytechnic University, Dalian 116034, China;School of Information Science and Engineering, Shandong Univers 更多
通讯作者地址：[Geng, R] School of International Education, Dalian Polytechnic UniversityChina;
关键词：a-IGZO TFT;active image sensor;circular structure;high gain
摘要：We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide (aIGZO) thin-film transistors (TFTs) with a circular structure.The TFT,configured with the inner electrode as source and outer electrode as drain,typically exhibits good saturation electrical characteristics,where the device has a constant drive current despite variations in drain voltage.Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape,the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs.They can be used as driving TFTs in active image sensor circuits.They are,therefore,good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.