标题：Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
作者：Li, Yunpeng; Zhang, Jiawei; Yang, Jin; Yuan, Yvzhuo; Hu, Zhenjia; Lin, Zhaojun; Song, Aimin; Xin, Qian
作者机构：[Li, Yunpeng; Yang, Jin; Yuan, Yvzhuo; Hu, Zhenjia; Lin, Zhaojun; Song, Aimin; Xin, Qian] Shandong Univ, Sch Microelect, Ctr Nanoelect, State Key Lab 更多
通讯作者：Li, Yunpeng;Li, YP
通讯作者地址：[Li, YP]Shandong Univ, Sch Microelect, Ctr Nanoelect, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
来源：IEEE TRANSACTIONS ON ELECTRON DEVICES
关键词：CMOS; IC; oxide semiconductor; thin-film transistor (TFT)
摘要：Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to similar to 40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input-output characteristics. The performances of ROs indicate small stage delay of similar to 1 mu s, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.