标题:Thermal Expansion and Electro-Elastic Features of Ba2TiSi2O8 High Temperature Piezoelectric Crystal
作者:Jiang, Chao; Chen, Feifei; Yu, Fapeng; Tian, Shiwei; Cheng, Xiufeng; Zhang, Shujun; Zhao, Xian
作者机构:[Jiang, Chao; Chen, Feifei; Yu, Fapeng; Tian, Shiwei; Cheng, Xiufeng; Zhao, Xian] Shandong Univ, Adv Res Ctr Opt, State Key Lab Crystal Mat, Jinan 250 更多
通讯作者:Yu, FP
通讯作者地址:[Yu, FP]Shandong Univ, Adv Res Ctr Opt, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.
来源:CRYSTALS
出版年:2019
卷:9
期:1
DOI:10.3390/cryst9010011
关键词:crystal growth; piezoelectricity; thermal expansion
摘要:A high-quality Ba2TiSi2O8 (BTS) single crystal was grown using the Czochralski (Cz) pulling method. The thermal expansion and electro-elastic properties of BTS crystal were studied for high temperature sensor applications. The relative dielectric permittivities were determined to be 16.3 and 11.8, while the piezoelectric coefficients d(15,) d(31,) d(33) were found to be 17.8, 2.9, and 4.0 pC/N, respectively. Temperature dependence of electro-elastic properties were investigated, where the variation of elastic compliance \ was found to be <6% over temperature range of 20-700 degrees C. Taking advantage of the anisotropic thermal expansion, linear thermal expansion comparable to insulating alumina ceramic was achieved over temperature range up to 650 degrees C. The optimum crystal cut with large effective piezoelectric coefficient (>8.5 pC/N) and linear thermal expansion coefficient (8.03 ppm/degrees C) achieved for BTS crystal along the (47 degrees, phi) direction (phi is arbitrary in 0-360 degrees), together with its good temperature stability up to 650 degrees C, make BTS crystal a promising candidate for high temperature piezoelectric sensors.
收录类别:SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85059393816&doi=10.3390%2fcryst9010011&partnerID=40&md5=5364c29ac1200526495f2fa461c66a17
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