标题：Passively Q-Switched Nd:GdVO4 1.3 μm Laser with Few-Layered Black Phosphorus Saturable Absorber
作者：Sun, Xiaoli ;Nie, Hongkun ;He, Jingliang ;Zhao, Ruwei ;Su, Xiancui ;Wang, Yiran ;Zhang, Baitao ;Wang, Ruihua ;Yang, Kejian
作者机构：[Sun, Xiaoli ;Nie, Hongkun ;He, Jingliang ;Zhao, Ruwei ;Su, Xiancui ;Wang, Yiran ;Zhang, Baitao ;Wang, Ruihua ] State Key Laboratory of Crystal Materi 更多
来源：IEEE Journal of Selected Topics in Quantum Electronics
摘要：By using a few-layer black phosphorus (BP) as the saturable absorber (SA), a laser-diode end-pumped stable Q-switched Nd:GdVO4laser operating at 1.3 μm was realized. A maximum average output power of 452 mW was obtained at 2.22 W absorbed pump power, corresponding to a 34.5% slope efficiency. The shortest pulse width, highest pulse repetition rate, and largest peak power were determined to be 72 ns, 625 kHz, and 10.04 W, respectively. To the best of our knowledge, this pulse duration was the shortest ever reported for passive Q-switched bulk lasers based on two-dimensional materials at 1.3 μm. Results suggested that BP can be used to achieve short laser pulses with high repetition rate at 1.3 μm spectral region.
© 2017 IEEE.