标题:Crystal growth and characterization of Ca3NbGa3Si2O14 single crystal
作者:Shi, XZ; Yuan, DR; Cheng, XF; Guo, SY; Yu, GW; Li, ZF
通讯作者:Yuan, DR
作者机构:[Shi, X] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Yuan, D] State Key Laboratory of Crystal Materials, Sha 更多
会议名称:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期:OCT 16-19, 2005
来源:稀土学报(英文版)
出版年:2006
卷:24
页码:197-199
关键词:czochralski method;gallium compounds;atomic force microscopy
摘要:Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.
收录类别:CPCI-S;SCOPUS;SCIE
WOS核心被引频次:2
Scopus被引频次:2
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745650273&doi=10.1016%2fS1002-0721%2806%2960093-8&partnerID=40&md5=d6c9f30ec43b0b7090bd6c032957cfc8
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