标题：Crystal growth and characterization of Ca3NbGa3Si2O14 single crystal
作者：Shi, XZ; Yuan, DR; Cheng, XF; Guo, SY; Yu, GW; Li, ZF
作者机构：[Shi, X] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Yuan, D] State Key Laboratory of Crystal Materials, Sha 更多
会议名称：3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期：OCT 16-19, 2005
关键词：czochralski method;gallium compounds;atomic force microscopy
摘要：Single crystals of Ca3NbGa3Si2O14 (CNGS) with ordered Ca3Ga2Ge4O14 (CGG) structure were successfully grown from stoichiometric melts by conventional Czochralski technique along the a-axis and two large (001) facets and two small (100) facets appear in every crystal. An arrangement of parallel steps and a clear height change were observed in (001) facet by atomic force microscopy (AFM). High-resolution X-ray diffraction (HRXRD) results indicate that CNGS crystals have good quality and free low-angle boundaries. The crystals also exhibit good optical quality and high optical transmittance in c-direction.