标题：Preparation of SiC whiskers deposited by CVD process
作者：Meng, Fan-Tao ;Du, Shan-Yi ;Zhang, Yu-Min
作者机构：[Meng, Fan-Tao ;Du, Shan-Yi ;Zhang, Yu-Min ] Center for Composite Materials, Harbin Institute of Technology, Harbin 150001, China;[Meng, Fan-Tao ] Sch 更多
来源：Rengong Jingti Xuebao/Journal of Synthetic Crystals
摘要：SiC whiskers were deposited on RB-SiC substrate in a hot-wall chemical vapor deposition furnace, using methyltrichloride silicane (MTS) as precursor gas, H2 as carrier gas and argon as dilute gas, at 1100°C and 1150°C respectively. The effects of deposition temperature and dilute gas on the morphology of deposits were studied. The morphologies and composition of the deposits were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, the deposits at 1100°C are composed of whiskers and the deposits at 1150°C are of whiskers and grains. The mean diameter of the whiskers increases with the rise of the temperature between 1100°C and 1150°C. With the addition of dilute gas, the number of the curly defects of whiskers at 1100°C and grains in the deposits at 1150°C decrease. The as-obtained whiskers at 1100°C are determined as β-SiC. Furthermore, the growing mechanism of the deposits and the reason of the variation of morphologies were explained theoretically.