标题:Electronic properties of g-C3N4/CdS heterojunction from the first-principles
作者:Li, Jinjin ;Wei, Wei ;Mu, Cong ;Huang, Baibiao ;Dai, Ying
作者机构:[Li, Jinjin ;Wei, Wei ;Mu, Cong ;Huang, Baibiao ;Dai, Ying ] School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan; 更多
通讯作者:Dai, Ying
来源:Physica E: Low-Dimensional Systems and Nanostructures
出版年:2018
卷:103
页码:459-463
DOI:10.1016/j.physe.2018.04.023
摘要:In this work, electronic structures of two-dimensional (2D) g-C3N4/CdS heterojunction are systematically investigated by means of the first-principles calculations. Our results indicate that g-C3N4 monolayer and CdS monolayer form a standard type-Ⅱ heterojunction, with both the valence band maximum (VBM) and the conduction band minimum (CBM) of CdS monolayer higher than those of g-C3N4 monolayer, and the water reduction and oxidation potentials lie in-between the VBM and CBM of g-C3N4/CdS heterojunction. Moreover, the charge density difference of g-C3N4/CdS heterojunction indicates that an internal electric field forms between g-C3N4 monolayer and CdS monolayer, which will further restrain the recombination of photogenerated carriers. These results suggest that g-C3N4/CdS heterojunction is beneficial to enhance the efficiency of photocatalytic water splitting under visible-light irradiation.
© 2018 Elsevier B.V.
收录类别:EI
资源类型:期刊论文
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