标题:Preparation and characterization of high mobility nb-doped Sno2 transparent conducting films
作者:He L.; Luan C.; Wang D.; Le Y.; Ma J.
作者机构:[He, L] School of Microelectronics, Shandong University, Jinan, 250100, China;[ Luan, C] School of Microelectronics, Shandong University, Jinan, 25010 更多
来源:Materials Science Forum
出版年:2020
卷:993 MSF
页码:869-875
DOI:10.4028/www.scientific.net/MSF.993.869
关键词:High mobility; SnO2; Transparent conductive oxide semiconductor
摘要:Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO2 films on SiO2 glass substrates. The structure, optical and electrical properties of the Nb-doped SnO2 films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO2 films were obtained with a preferred SnO2 [110] growth direction. Among which, the 5.4 at.% Nb-doped SnO2 film showed the lowest resistivity of 1.0×10-3 Ω∙cm and the highest Hall mobility of 74 cm2∙V-1∙s-1. The average visible light transmittance of the 5.4 at.% Nb-doped SnO2 sample was more than 79%. The obtained Nb-doped SnO2 films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices. © 2020 Trans Tech Publications Ltd, Switzerland.
收录类别:SCOPUS
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85087170428&doi=10.4028%2fwww.scientific.net%2fMSF.993.869&partnerID=40&md5=b8cf5aea14992d1e1b45a766c1aff461
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