标题：Preparation and characterization of high mobility nb-doped Sno2 transparent conducting films
作者：He L.; Luan C.; Wang D.; Le Y.; Ma J.
作者机构：[He, L] School of Microelectronics, Shandong University, Jinan, 250100, China;[ Luan, C] School of Microelectronics, Shandong University, Jinan, 25010 更多
来源：Materials Science Forum
关键词：High mobility; SnO2; Transparent conductive oxide semiconductor
摘要：Metal organic chemical vapor deposition (MOCVD) was employed for the preparation of niobium (Nb)-doped SnO2 films on SiO2 glass substrates. The structure, optical and electrical properties of the Nb-doped SnO2 films were systemically studied. The X-ray diffraction results indicated that the polycrystalline rutile SnO2 films were obtained with a preferred SnO2  growth direction. Among which, the 5.4 at.% Nb-doped SnO2 film showed the lowest resistivity of 1.0×10-3 Ω∙cm and the highest Hall mobility of 74 cm2∙V-1∙s-1. The average visible light transmittance of the 5.4 at.% Nb-doped SnO2 sample was more than 79%. The obtained Nb-doped SnO2 films exhibited low resistivity, high Hall mobility and good transparency, which might have wide applications in electric and photoelectric devices. © 2020 Trans Tech Publications Ltd, Switzerland.