标题:Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer
作者:Guo, Haijun ;Cao, Chao ;Duan, Baoxing
作者机构:[Guo, Haijun ] School of Information Science and Engineering, University of Jinan, Jinan, China;[Cao, Chao ;Duan, Baoxing ] School of Microelectronics 更多
会议名称:2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
会议日期:12 June 2019 through 14 June 2019
来源:2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
出版年:2019
DOI:10.1109/EDSSC.2019.8754016
关键词:AlGaN/GaN HEMTs; Analytical model; Electric field modulation
摘要:Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron-mobility transistors (HEMTs) with a etched AlGaN barrier layer is formulated in this paper. Based on Poisson's equation, the off-state channel potential and electric field distributions are achieved. By comparing with the ISE TCAD simulation results, the accuracy of the analytical model is validated and a good consistency is obtained. © 2019 IEEE.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85069501079&doi=10.1109%2fEDSSC.2019.8754016&partnerID=40&md5=eeeb84246278f209f15671dd6d803b81
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