标题：Two-dimensional analytical model of AlGaN/GaN HEMTs with a etched algan barrier layer
作者：Guo, Haijun ;Cao, Chao ;Duan, Baoxing
作者机构：[Guo, Haijun ] School of Information Science and Engineering, University of Jinan, Jinan, China;[Cao, Chao ;Duan, Baoxing ] School of Microelectronics 更多
会议名称：2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
会议日期：12 June 2019 through 14 June 2019
来源：2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
关键词：AlGaN/GaN HEMTs; Analytical model; Electric field modulation
摘要：Take complete depletion as example, a two-dimensional analytical model of AlGaN/GaN high-electron-mobility transistors (HEMTs) with a etched AlGaN barrier layer is formulated in this paper. Based on Poisson's equation, the off-state channel potential and electric field distributions are achieved. By comparing with the ISE TCAD simulation results, the accuracy of the analytical model is validated and a good consistency is obtained. © 2019 IEEE.