标题:Ion beam defect engineering in semiconductors and optoelectric materials
作者:Wang, ZL; Zhao, QT; Wang, KM; Shi, BR
通讯作者:Wang, ZL
作者机构:[Wang, ZL; Zhao, QT; Wang, KM; Shi, BR]SHANDONG UNIV,DEPT PHYS,JINAN 250100,PEOPLES R CHINA.
会议名称:16th International Conference on Atomic Collisions in Solids (ICACS-16)
会议日期:JUL 17-21, 1995
来源:NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版年:1996
卷:115
期:1-4
页码:421-429
DOI:10.1016/0168-583X(95)01543-4
摘要:In this paper, the recent progress and applications of ion beam defect engineering (IBDE) are reported. IBDE in silicon shows that it can be used for (1) the reduction of secondary defects created by the dopant-ion implantation, (2) the gettering of F atoms from the B doped regions in BF2 implanted silicon; (3) the reduction of B diffusion in BF2 implanted silicon. IBDE applications in optoelectric crystals are also investigated. Waveguide can be formed in LiNbO3 by MeV Cu ion implantation and in KTiOPO4 (KTP) by multi-energy (MeV) He ion implantation. Mechanisms and trends of IBDE in the future are also discussed.
收录类别:CPCI-S;SCOPUS;SCIE
WOS核心被引频次:4
Scopus被引频次:3
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030564497&doi=10.1016%2f0168-583X%2895%2901543-4&partnerID=40&md5=c967aaa893e2ed9b244f3fc19ba45d2a
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