标题:Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors
作者:Yang, Ming; Lv, Yuanjie; Cui, Peng; Liu, Yan; Fu, Chen; Lin, Zhaojun
作者机构:[Yang, Ming; Cui, Peng; Liu, Yan; Fu, Chen; Lin, Zhaojun] Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China.; [Lv, Yuanjie] Heb 更多
通讯作者:Lin, Zhaojun;Lin, ZJ
通讯作者地址:[Lin, ZJ]Shandong Univ, Sch Microelect, Jinan 250100, Shandong, Peoples R China.
来源:JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
出版年:2018
卷:123
页码:223-227
DOI:10.1016/j.jpcs.2018.08.006
关键词:AlGaN/GaN HFETs; Polarization and strain distribution; Polarization; coulomb field scattering
摘要:In AlGaN/GaN heterostructure field-effect transistors (HFETs), the polarization Coulomb field scattering is determined by the ionized surface states of the AlGaN barrier layer surface and the additional polarization charges at the AlGaN/GaN interface. Based on the experimentally obtained 2DEG electron mobility and taking into account several main scattering mechanisms, especially polarization Coulomb field scattering, an iterative calculation method is proposed to determine the polarization and strain distribution under different bias voltages in the fabricated AlGaN/GaN HFETs, and a relationship is presented to connect the additional polarization/strain, the voltage drop through the gate Schottky barrier, and the device size. Based on this relationship, the strain energy in the AlGaN barrier layer is analyzed, and it is found that the total strain energy remains approximately constant.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051133418&doi=10.1016%2fj.jpcs.2018.08.006&partnerID=40&md5=10176361fad6e99d01e5f7caa39d630a
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