标题:Indium oxide nanocrystals: Capping-agent-free synthesis, size-control mechanism, and high gas-sensing performance
作者:Chen, Changlong; Wei, Yuling; Chen, Dairong; Jiao, Xiuling
作者机构:[Chen, Changlong] Univ Jinan, Sch Chem & Chem Engn, Shandong Prov Key Lab Fluorine Chem & Chem Mat, Jinan 250022, Shandong Prov, Peoples R China.; [ 更多
通讯作者:Chen, C
通讯作者地址:[Chen, CL]Univ Jinan, Sch Chem & Chem Engn, Shandong Prov Key Lab Fluorine Chem & Chem Mat, Jinan 250022, Shandong Prov, Peoples R China.
来源:MATERIALS CHEMISTRY AND PHYSICS
出版年:2011
卷:125
期:1-2
页码:299-304
DOI:10.1016/j.matchemphys.2010.09.042
关键词:Semiconductors; Chemical synthesis; Precipitation; Powder diffraction
摘要:Indium oxide nanocrystals with size of 8-20 nm have been synthesized by annealing the precursor particles at ambient pressure. No surfactants or capping agents were used in the synthesis. Depending on the ripening time of the precursor particles in their mother solution, rough control of the crystal size of the annealed indium oxide was achieved. It is interesting that the size of the annealed indium oxide crystals decreases with prolonging the ripening time of the precursor particles, which is the opposite as expected. We proposed a possible mechanism, that is the pre-disintegrating of the precursor particles happened during the ripening process, to explain the rough control of the crystal size. Promoted by attributes of the crystals such as small size, free of surfactant, and abundant defects, we fabricated indium oxide gas sensors and found that these sensors had good response to NO(2) gas and can achieve a detection limit as low as 20 ppb. (C) 2010 Elsevier B.V. All rights reserved.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:17
Scopus被引频次:17
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-78049268634&doi=10.1016%2fj.matchemphys.2010.09.042&partnerID=40&md5=f0f22f86843e341dd8ed0d59c6dc2be4
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