标题:On the Reliability of Charge-Trap (CT) Type Three-dimensional (3D) NAND Flash Memory
作者:Chen, Jiezhi
通讯作者:Chen, Jiezhi
作者机构:[Chen, Jiezhi ] School of Information Science and Engineering (ISE), Shandong University, Qingdao; 266237, China
会议名称:14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018
会议日期:31 October 2018 through 3 November 2018
来源:2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
出版年:2018
DOI:10.1109/ICSICT.2018.8565794
摘要:With ultra-high storage density, low bit cost and better performance, vertical three-dimensional (3D) NAND flash memory turns to be the main storage stream in the market. However, in the viewpoint of reliability, 3D NAND flash memory are quite different from traditional its 2D counterpart considering the special structures and integration processes in 3D NAND. In this work, several fundamental reliability problems in 3D NAND memory cells are addressed, including the polycrystalline Si channel, carrier tunneling layer and the silicon nitride charge storage layer. © 2018 IEEE.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85060308350&doi=10.1109%2fICSICT.2018.8565794&partnerID=40&md5=a02e44e5141cf37506d606ce9fa9d76b
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