标题：Growth of wafer size Graphene on SiC Substrates
作者：Chen, Xiufang; Wei, Rusheng; Gao, Yuqiang; Peng, Yan; Song, Sheng; Wang, Lihuan; Hu, Xiaobo; Xu, Xiangang; Jiang, Minhua
作者机构：[Chen, Xiufang; Wei, Rusheng; Gao, Yuqiang; Peng, Yan; Song, Sheng; Wang, Lihuan; Hu, Xiaobo; Xu, Xiangang; Jiang, Minhua] Shandong Univ, State Key La 更多
会议名称：11th International Conference in Asia of the International-Union-of-Materials-Research-Societies
会议日期：SEP 25-28, 2010
来源：FUNCTIONAL AND ELECTRONIC MATERIALS
关键词：Crystal Morphology; Graphene; Surface
摘要：Graphene, as strict two-dimensional material, exhibits exceptionally good electronic properties. In this paper, graphene was prepared on SiC substrates at different temperature based on two types of pre-treated surface. The surface morphology was characterized by atomic force microscopy (AFM) and scanning electronic microscopy (SEM). The results on SiC surface pre-treatment showed that chemical mechanical polishing (CMP) was an effective surface treatment method for reproducible and controlled growth of graphene. Images of the Si-surface revealed that the thickness of graphitic layers increased with annealing temperature. Meanwhile, a mesh-like network of wrinkles tended to tent-like features with the increase of temperature. The residual stresses, average crystallite size and number of graphene layers were analyzed by Raman spectroscopy. Little shift of 2D-band indicated the presence of certain stresses. Results among four samples showed that graphene layers grown on MP C-surface substrates had the thickest layers,contained the smallest average crystallite size L-a and exhibited no stresses. While graphene layers grown on Si-surface under 1600 degrees C built upon compressive stresses, exhibited largest L-a and least number of graphene layers, indicating perfect quality.