标题:Sub-nanosecond Nd:Lu0.61Gd0.39VO4 microchip laser
作者:Han, Shuo; Zhang, Huaijin; Wang, Zhengping; Xu, Xinguang
作者机构:[Han, Shuo] Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu, Peoples R China.; [Zhang, Huaijin; Wang, 更多
通讯作者:Han, Shuo
通讯作者地址:[Han, S]Qufu Normal Univ, Sch Phys & Phys Engn, Shandong Prov Key Lab Laser Polarizat & Informat, Qufu, Peoples R China.
来源:JOURNAL OF MODERN OPTICS
出版年:2018
卷:65
期:15
页码:1759-1763
DOI:10.1080/09500340.2018.1458917
关键词:Passively Q-switched; microchip laser; Nd:Lu0.61Gd0.39VO4/Cr4+:YAG; crystal; sub-nanosecond; transverse mode overlapping
摘要:We report the fabrication and operation of a single-to-three-mode, sub-nanosecond passively Q-switched Nd:Lu0.61Gd0.39VO4/Cr4+:YAG microchip laser, which exhibits changes in mode structure with increasing incident pump power. The laser exhibits longitudinal mode oscillations with a partial transverse mode overlap. The shortest pulse duration, highest pulse energy and peak power observed are 646ps, 8.7 mu J and 13.5kW, respectively.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044919210&doi=10.1080%2f09500340.2018.1458917&partnerID=40&md5=449782cc9e7a7d8440da25150ef7ee85
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