标题:Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte
作者:Du, Lulu; He, Dandan; Liu, Yaxuan; Xu, Mingsheng; Wang, Qingpu; Xin, Qian; Song, Aimin
作者机构:[Du, Lulu; He, Dandan; Liu, Yaxuan; Xu, Mingsheng; Wang, Qingpu; Xin, Qian; Song, Aimin] Shandong Univ, Sch Microelect, State Key Lab Crystal Mat, Ctr 更多
通讯作者:Xin, Q;Xin, Qian
通讯作者地址:[Xin, Q]Shandong Univ, Sch Microelect, State Key Lab Crystal Mat, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China.
来源:IEEE ELECTRON DEVICE LETTERS
出版年:2018
卷:39
期:9
页码:1334-1337
DOI:10.1109/LED.2018.2862910
关键词:Electric double layer transistors (EDLTs); carving; cutting; and; flip-chip bonding (CCFB); flexible; low operating voltages
摘要:A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance (4.5 mu F/cm(2) at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of > 10(-4) A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4 x 10(7), a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm(2) Ns, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.
收录类别:EI;SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85051006431&doi=10.1109%2fLED.2018.2862910&partnerID=40&md5=b4233fd310c964e6b22b60f4d5fbfa6d
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