标题：Low-Voltage, Flexible IGZO Transistors Gated by PSSNa Electrolyte
作者：Du, Lulu; He, Dandan; Liu, Yaxuan; Xu, Mingsheng; Wang, Qingpu; Xin, Qian; Song, Aimin
作者机构：[Du, Lulu; He, Dandan; Liu, Yaxuan; Xu, Mingsheng; Wang, Qingpu; Xin, Qian; Song, Aimin] Shandong Univ, Sch Microelect, State Key Lab Crystal Mat, Ctr 更多
通讯作者：Xin, Q;Xin, Qian
通讯作者地址：[Xin, Q]Shandong Univ, Sch Microelect, State Key Lab Crystal Mat, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China.
来源：IEEE ELECTRON DEVICE LETTERS
关键词：Electric double layer transistors (EDLTs); carving; cutting; and; flip-chip bonding (CCFB); flexible; low operating voltages
摘要：A carving, cutting, and flip-chip bonding process is proposed for the fabrication of flexible electric double layer transistors (EDLTs) with low cost. Solution processed poly(styrenesulfonic acid sodium salt) is used as a gate dielectric. The large EDL-specific capacitance (4.5 mu F/cm(2) at 20 Hz) can induce very high charge carrier density in the InGaZnO (IGZO) channel layer, enabling the EDLTs to operate at a single-battery-drivable low voltage of 1.0 V with a high on-current of > 10(-4) A. The effect of IGZO layer thickness on the performance of EDLTs was investigated. The flexible EDLT with optimized IGZO thickness of 100 nm has achieved a high on/off ratio of 1.4 x 10(7), a low threshold voltage of 0.51 V, a saturated field-effect mobility of 1.14 cm(2) Ns, and high positive gate bias stress stability. Furthermore, the achieved subthreshold swing, 76 mV/dec, is very close to the theoretical ideal minimum value.