标题：Simulation Study of Enhancement-Mode InAlN/GaN HEMT with InGaN Cap Layer
作者：Wei, Lin-Cheng; Wang, Quan; Feng, Chun; Xiao, Hong-Ling; Jiang, Li-Juan; Wang, Cui-Mei; Li, Wei; Wang, Xiao-Liang; Liu, Feng-Qi; Xu, 更多 作者机构：[Wei, Lin-Cheng; Wang, Quan; Feng, Chun; Xiao, Hong-Ling; Jiang, Li-Juan; Wang, Cui-Mei; Li, Wei; Wang, Xiao-Liang; Liu, Feng-Qi; Wang, Zhan-Guo] Chin 更多
通讯作者：Wang, XL;Wang, XL;Wang, Xiao-Liang
通讯作者地址：[Wang, XL]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;[Wang, XL]Univ Chinese Acad Sci, Beijing 101408, 更多
来源：JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
关键词：Enhancement-Mode; InAlN/GaN HEMT; Simulation
摘要：In this paper, we propose and simulate a novel enhancement-mode InGaN/InAlN/GaN HEMT. The influence of the layer thickness and In content of the InGaN cap as well as the thickness and Al content of the InAlN barrier layer on the sheet carrier density of both two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) is systematically investigated. It is shown that the piezoelectric-polarization-induced reverse electric field in the InGaN cap layer will deplete the 2DEG at the InAlN/GaN interface. Also, the calculation shows that the In content and thickness of the InAlN barrier layer have a significant influence on 2DEG sheet density. However, once the In content of the InAlN barrier layer is fixed, there exists a critical thickness beyond which the 2DEG will not be depleted by the InGaN cap layer. With a proper design of In content and thickness of the InGaN cap layer, there is always an appropriate thickness interval, i.e., a working window, with which the 2DEG is depleted while the 2DHG is not formed. That particular window will leave enough operation space to fabricate an E-mode InGaN/InAlN/GaN HEMT. These calculated results demonstrate that the InGaN/InAlN/GaN hetero-structure has a great potential to implement a novel E-mode high electron mobility transistor.