标题:Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells
作者:Jiang, Ran ;Wu, Zhengran ;Du, Xianghao ;Han, Zuyin ;Sun, Weideng
作者机构:[Jiang, Ran ;Wu, Zhengran ;Du, Xianghao ;Han, Zuyin ;Sun, Weideng ] Physical School, Shandong University, 27# Shanda Southern Road, Jinan; Shandong; 2 更多
来源:Applied Physics Letters
出版年:2015
卷:107
期:1
DOI:10.1063/1.4926505
摘要:Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention, and reliable endurance, was observed in TiN/Si:HfO2/oxygen-deficient HfO2/TiN memory cells. The enhanced resistance ratio is ascribed to the creation/elimination of an extra barrier in oxygen-deficient HfO2layer in response to the polarization reversal in the ferroelectric Si:HfO2layer. Along with the enhanced resistance ratio, the long retention and good endurance make the proposed device a promising candidate for non-volatile resistive memories.
© 2015 AIP Publishing LLC.
收录类别:EI
资源类型:期刊论文
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