标题：Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells
作者：Jiang, Ran ;Wu, Zhengran ;Du, Xianghao ;Han, Zuyin ;Sun, Weideng
作者机构：[Jiang, Ran ;Wu, Zhengran ;Du, Xianghao ;Han, Zuyin ;Sun, Weideng ] Physical School, Shandong University, 27# Shanda Southern Road, Jinan; Shandong; 2 更多
来源：Applied Physics Letters
摘要：Greatly improved resistance performance, including high resistance ratio between the high resistance state and the low resistance state, long-time retention, and reliable endurance, was observed in TiN/Si:HfO2/oxygen-deficient HfO2/TiN memory cells. The enhanced resistance ratio is ascribed to the creation/elimination of an extra barrier in oxygen-deficient HfO2layer in response to the polarization reversal in the ferroelectric Si:HfO2layer. Along with the enhanced resistance ratio, the long retention and good endurance make the proposed device a promising candidate for non-volatile resistive memories.
© 2015 AIP Publishing LLC.