标题:X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
作者:Wang, Quan; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Liu, Fengqi; Xu, Xiangang; Wang, Zhanguo
作者机构:[Wang, Quan; Xu, Xiangang] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China.; [Wang, Quan; Wang, Xiaoliang; Xiao, H 更多
通讯作者:Xu, XG;Wang, XL;Wang, XL;Wang, Xiaoliang
通讯作者地址:[Xu, XG]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China;[Wang, XL]Chinese Acad Sci, Inst Semicond, Key Lab Semicond 更多
来源:JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
出版年:2018
卷:18
期:11
页码:7451-7454
DOI:10.1166/jnn.2018.16075
关键词:X-Band; GaN HEMT; Power Amplifier
摘要:High quality AlGaN/AlN/GaN high electron mobility transistors (HEMTs) were grown on 3-inch diameter semi-insulating 6H-SiC substrates by metal organic chemical vapor deposition. The GaN HEMT wafer exhibited an average sheet resistance of 342.2 Omega/square with a uniformity of 1.5% by introducing both the high mobility GaN channel layer and AlN interlayer. At room temperature a Hall mobility of 2412.06 cm(2)/Vs and a two-dimensional electron gas density of 7.654 x 10(12) cm(-2) are achieved. Atomic force microscopy showed a smooth surface and a root-mean-square roughness of 0.227 nm for 10 x 10 mu m(2) scan area. Direct current measurements revealed a maximum drain current density of 1.31 A/mm and an extrinsic transconductance of 450 mS/mm. The current gain cutoff frequency and maximum frequency of oscillation of the device were measured to be 31 GHz and 60 GHz, respectively. Eight-cell internally-matched GaN HEMT device exhibited a maximum continuous-wave output power of 110.9 W at 8 GHz, with a power-added efficiency of 33.7% and a power gain of 6.35 dB.
收录类别:EI;SCIE
资源类型:期刊论文
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