标题:Analytical model of energy level alignment at metal-organic interface facilitating hole injection
作者:Shi, Xuewen ;Xu, Guangwei ;Duan, Xinlv ;Lu, Nianduan ;Chen, Jiezhi ;Li, Ling ;Liu, Ming
作者机构:[Shi, Xuewen ;Xu, Guangwei ;Duan, Xinlv ;Lu, Nianduan ;Li, Ling ;Liu, Ming ] Key Laboratory of Microelectronic Device and Integrated Technology, Insti 更多
会议名称:2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017
会议日期:7 September 2017 through 9 September 2017
来源:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
出版年:2017
卷:2017-September
页码:225-228
DOI:10.23919/SISPAD.2017.8085305
关键词:Electrostatic model; Energy level alignment; Exponential density of states; Metal-organic interface
摘要:An analytical description of energy level alignment at metal-organic interface based on a detailed electrostatic model and exponential density of states is presented here. The calculated alignment between the Fermi energy of electrode and the organic transport energy shows good quantitative agreement with the proposed numerical electrostatic model and experimental data, indicating that the analytical model can well describe the material disorder and carrier density. More important, the simulations highlight that the electrode with high effective work functions and the organic material with large dielectric constant can facilitate the hole injection from metal to organic. Finally, the Gaussian distribution density of states has compare to the exponential model, confirmed the accuracy of the analytical description for energy level alignment. © 2017 The Japan Society of Applied Physics.
收录类别:EI;SCOPUS
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85039060070&doi=10.23919%2fSISPAD.2017.8085305&partnerID=40&md5=528ebf64c5d97b3e021afadd3490d173
TOP