标题:Research on optical properties for the exponential-doped Ga 1-xAlxAs/GaAs photocathode
作者:Zhao, Jing ;Chang, Benkang ;Xiong, Yajuan ;Zhang, Yijun ;Zhang, Junju
通讯作者:Zhao, J
作者机构:[Zhao, Jing ;Chang, Benkang ;Xiong, Yajuan ;Zhang, Yijun ;Zhang, Junju ] Institute of Electronic Engineering and Optoelectronic Technology, Nanjing Un 更多
会议名称:2011 Symposium on Photonics and Optoelectronics, SOPO 2011
会议日期:May 16, 2011 - May 18, 2011
来源:2011 Symposium on Photonics and Optoelectronics, SOPO 2011
出版年:2011
DOI:10.1109/SOPO.2011.5780485
摘要:To research the influencing factors in the optical properties of Ga 1-xAlxAs /GaAs photocathode, one uniform-doped sample was prepared with the GaAs thickness of 2.00 μm and the Be-doping concentration of 1×1019 cm-3, and two more exponential-doped samples were 2.00 μm and 1.60 μm in the thickness whose Be-doping concentration quasi-exponentially distributed ranging from 1×1018 cm-3 to 1×1019 cm -3. The optical properties curves were separately measured by use of the spectrophotometer. Based on thin film optical principles, matrix model of the optical properties is built for the four-layer photocathode module with a structure of Glass/Si3N4/ Ga1-xAlxAs /GaAs. The result shows that the photocathode with low average doping concentration and large thickness has high absorptivity within the response waveband. According to integral sensitivity equation, the optimized GaAs thickness of the exponential-doped Ga1-xAlxAs/GaAs photocathode is simulated to be 2.00 μm. © 2011 IEEE.
收录类别:EI
资源类型:会议论文
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