标题:Structural, electrical and optical properties of ternary Al2xIn2(1-x)O3films prepared by metal organic chemical vapor deposition
作者:Du, Xue Jian ;Feng, Xian Jin ;Wang, Wei Guang ;Luan, Cai Na ;Ma, Jin
作者机构:[Du, Xue Jian ;Feng, Xian Jin ;Wang, Wei Guang ;Luan, Cai Na ;Ma, Jin ] School of Microelectronics, Shandong University, Jinan; 250100, China
会议名称:17th IUMRS International Conference in Asia, IUMRS-ICA 2016
会议日期:October 20, 2016 - October 24, 2016
来源:Materials Science Forum
出版年:2017
卷:898 MSF
页码:1796-1803
DOI:10.4028/www.scientific.net/MSF.898.1796
摘要:New wide band gap semiconductors with tunable properties are desperately needed to meet the ever-increasing demands of photoelectric devices operating in the ultraviolet (UV) or even deep ultraviolet (DUV) region. In this study, the ternary aluminum indium oxide (Al2xIn2(1-x)O3) films with different Al compositions of x [Al/(Al+In) atomic ratio] were successfully grown on the α-Al2O3(0001) substrates at 650 °C by metal organic chemical vapor deposition (MOCVD). The influence of Al content on the structural, compositional, electrical and optical properties of the obtained films was investigated in detail. The structural transition from polycrystalline structure of bixbyite In2O3to amorphous was observed as the Al content increased. The lowest resistivity of 1.52×10-3Ω·cm was obtained for the sample with x=0.2, along with the respective hall mobility and carrier concentration values of 12.87 cm2V-1s-1and 2.27×1020 cm-3. The average visible transmittances of over 83% were demonstrated for all the samples. The calculated values of optical band gap for the films indicated continuous increase from 3.82 to 5.88 eV as the x value increased from 0.1 to 0.9. The Al2xIn2(1-x)O3films with tunable properties may be potentially employed in the fabrication of transparent optoelectronic devices, such as UV detectors, transparent TFTs and short wavelength light-emitting devices.
© 2017 Trans Tech Publications, Switzerland.
收录类别:EI
资源类型:会议论文
TOP