标题：Influence of SiO_3~(2-) impurity on growth habit of potassium dihydrogen phosphate crystal
作者：Ding, J.;Lu, Y.;Wang, S.;Mu, X.;Gu, Q.;Wang, Z.;Sun, Y.;Liang, X.;Xu, X.;Sun, X.;Liu, W.;Liu, G.;Zhu, S.
作者机构：[Ding, J] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Lu, Y] State Key Laboratory of Crystal Materials, Shan 更多
通讯作者地址：[Wang, SL]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源：Crystal Research and Technology: Journal of Experimental and Industrial Crystallography
关键词：Absorption;Growth from solutions;Impurities;KDP
摘要：By altering the concentration of silicate (SiO_3~(2-)) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO ~3_(2-)made KDP crystals tapering in conventional cooling method, while more SiO~3_(2-)induced inclusions at prismatic sectors in the rapid growth method. Laser-polarization-interference results showed that SiO~3_(2-)extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO ~3_(2-)on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO_3~(2-) was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO_3~(2-) absorption on (100) face.