标题:Influence of SiO_3~(2-) impurity on growth habit of potassium dihydrogen phosphate crystal
作者:Ding, J.;Lu, Y.;Wang, S.;Mu, X.;Gu, Q.;Wang, Z.;Sun, Y.;Liang, X.;Xu, X.;Sun, X.;Liu, W.;Liu, G.;Zhu, S.
作者机构:[Ding, J] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Lu, Y] State Key Laboratory of Crystal Materials, Shan 更多
通讯作者:Wang, S
通讯作者地址:[Wang, SL]Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China.
来源:Crystal Research and Technology: Journal of Experimental and Industrial Crystallography
出版年:2010
卷:45
期:8
页码:800-804
DOI:10.1002/crat.201000298
关键词:Absorption;Growth from solutions;Impurities;KDP
摘要:By altering the concentration of silicate (SiO_3~(2-)) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO ~3_(2-)made KDP crystals tapering in conventional cooling method, while more SiO~3_(2-)induced inclusions at prismatic sectors in the rapid growth method. Laser-polarization-interference results showed that SiO~3_(2-)extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO ~3_(2-)on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO_3~(2-) was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO_3~(2-) absorption on (100) face.
收录类别:EI;SCOPUS;SCIE
WOS核心被引频次:7
Scopus被引频次:8
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955732038&doi=10.1002%2fcrat.201000298&partnerID=40&md5=d8049de09807aacd7e6faddedf308d87
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