标题：(Na0.5Bi0.5)0.87Pb0.13TiO 3 thin films on different substrates for ferroelectric memory applications
作者：Yang, C.H. ;Hu, G.D. ;Sun, X.Q.
作者机构：[Yang, C.H. ;Hu, G.D. ] School of Materials Science and Engineering, University of Jinan, Jinan 250022, China;[Sun, X.Q. ] State Key Laboratory of Cry 更多
来源：Applied Physics Letters
摘要：(Na0.5 Bi0.5) 0.87 Pb0.13 Ti O3 thin films have been prepared on PtTiSi O2 Si and Bi2 Ti2 O7 Si substrates using a metal organic decomposition method. The electrical measurements were conducted on metal-ferroelectric-metal or metal-ferroelectric-insulator-semiconductor capacitors. As Bi2 Ti2 O7 is an effective diffusion barrier, the leakage current and memory properties of (Na0.5 Bi0.5) 0.87 Pb0.13 Ti O3 Bi2 Ti2 O7 Si are relatively improved. The polarization-electric field and capacitance-voltage measurements of (Na0.5 Bi0.5) 0.87 Pb0.13 Ti O3 on Pt show good ferroelectric properties. The three phase transitions in (Na0.5 Bi0.5) 0.87 Pb0.13 Ti O3 can be recognized by the change of capacitance with temperature. © 2007 American Institute of Physics.