标题：Low-angle grain boundaries in sublimation grown 6H-SiC crystals
作者：Jiang, SZ; Li, XX; Dong, J; Chen, XF; Xu, XG; Hu, XB
作者机构：[Jiang, S] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Li, X] State Key Laboratory of Crystal Materials, Sha 更多
会议名称：3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期：OCT 16-19, 2005
关键词：low-angle grain boundaries;sublimation;6H-SiC;radial temperature gradient
摘要：High-resolution X-ray diffractometry (HRXRD) was used to assess the quality of 6H-SiC crystals grown by sublimation method. The results show the occurrence of low-angle grain boundaries (LB) is close relative to the inclination of the crystal interface. At the central faceted region with 0° inclination the crystal is of high structural perfection. However, at the region close to the facet with less than 5° inclination LB occurs slightly and at the region close to the peripheral polytype ring with more than 5° inclination LB defect occurs heavily. The density of LB can be drastically reduced by decreasing radial temperature gradient that determines the shape of the crystal growth interface.