标题:Low-angle grain boundaries in sublimation grown 6H-SiC crystals
作者:Jiang, SZ; Li, XX; Dong, J; Chen, XF; Xu, XG; Hu, XB
通讯作者:Jiang, S.
作者机构:[Jiang, S] State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China;[ Li, X] State Key Laboratory of Crystal Materials, Sha 更多
会议名称:3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议日期:OCT 16-19, 2005
来源:稀土学报(英文版)
出版年:2006
卷:24
期:SUPPL.
页码:8-10
关键词:low-angle grain boundaries;sublimation;6H-SiC;radial temperature gradient
摘要:High-resolution X-ray diffractometry (HRXRD) was used to assess the quality of 6H-SiC crystals grown by sublimation method. The results show the occurrence of low-angle grain boundaries (LB) is close relative to the inclination of the crystal interface. At the central faceted region with 0° inclination the crystal is of high structural perfection. However, at the region close to the facet with less than 5° inclination LB occurs slightly and at the region close to the peripheral polytype ring with more than 5° inclination LB defect occurs heavily. The density of LB can be drastically reduced by decreasing radial temperature gradient that determines the shape of the crystal growth interface.
收录类别:CPCI-S;EI;SCOPUS;SCIE
WOS核心被引频次:1
Scopus被引频次:1
资源类型:会议论文;期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-33745548976&partnerID=40&md5=4fed0959fffc6df245d2ffdfd83ce377
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