标题:Defects coupling impacts on mono-layer WSe2 tunneling field-effect transistors
作者:Wu, Jixuan; Ma, Xiaolei; Chen, Jiezhi; Jiang, Xiangwei
作者机构:[Wu, Jixuan; Ma, Xiaolei; Chen, Jiezhi] Shandong Univ, Sch Informat Sci & Engn, Qingdao, Peoples R China.; [Wu, Jixuan; Ma, Xiaolei; Jiang, Xiangwei 更多
通讯作者:Chen, JZ;Jiang, XW
通讯作者地址:[Chen, JZ]Shandong Univ, Sch Informat Sci & Engn, Qingdao, Peoples R China;[Jiang, XW]Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & M 更多
来源:APPLIED PHYSICS EXPRESS
出版年:2019
卷:12
期:3
DOI:10.7567/1882-0786/ab00ea
摘要:For comprehensive understanding of the impacts of atomic defects in mono-layer transition-metal dichalcogenides (TMDs), defects coupling phenomenon are systematically studied in this work through ab initio calculations, by focusing on the device transmission characteristics in monolayer WSe2 tunneling field-effect transistors (TFETs). It is found that, although a single Se vacancy (V-Se) or single W vacancy (V-W) defect in the channel decreases the device performance significantly, this degradation can be well suppressed with defects coupling. Our results strongly indicate that defects could be well designed to obtain high performance TMDs TFETs. (C) 2019 The Japan Society of Applied Physics
收录类别:SCOPUS;SCIE
资源类型:期刊论文
原文链接:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85063349376&doi=10.7567%2f1882-0786%2fab00ea&partnerID=40&md5=2d89f3b088174b96a4f21a4ac75f71b9
TOP